Via and metal line interface capable of reducing the...

Details Via and metal line interface capable of reducing the... Via and metal line interface capable of reducing the...

2005-04-05

2005-04-05

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

06875693

ABSTRACT:
Embodiments of the invention include a method for forming copper interconnect structure. The method involves providing a substrate having a copper conductive layer formed thereon. An insulating layer having openings is formed on the conductive layer so that the openings expose portions of the underlying conductive layer at the bottom of the openings. A barrier layer is formed on the surface of the substrate. A portion of the barrier layer is removed at the bottom of the opening to expose the underlying conductive layer. A copper plug is formed in the opening such that the bottom of the plug is in contact with the exposed conductive layer. The substrate can be subjected to further processing if desired. The invention also includes a copper interconnect structure having increased resistance to electromigration.

REFERENCES:
patent: 6037258 (2000-03-01), Liu et al.
patent: 6689684 (2004-02-01), You et al.
patent: 6706629 (2004-03-01), Lin et al.

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