Very low dielectric constant plasma-enhanced CVD films

Details Very low dielectric constant plasma-enhanced CVD films Very low dielectric constant plasma-enhanced CVD films

2006-06-16

2009-12-15

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21575, C257SE21597, C257SE21641, C257SE21273, C438S623000, C438S622000

Reexamination Certificate

active

07633163

ABSTRACT:
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

REFERENCES:
patent: 4610859 (1986-09-01), Miyagawa et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4933430 (1990-06-01), Kessler et al.
patent: 5010166 (1991-04-01), Scholsky et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5312503 (1994-05-01), Yuki
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5420132 (1995-05-01), Guillaumet et al.
patent: 5508234 (1996-04-01), Dusablon, Sr. et al.
patent: 5540132 (1996-07-01), Hale
patent: 5541022 (1996-07-01), Mizumoto et al.
patent: 5638251 (1997-06-01), Goel et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5776990 (1998-07-01), Hedrick et al.
patent: 5849644 (1998-12-01), Schuegraf
patent: 5918146 (1999-06-01), Yamashita
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 5990015 (1999-11-01), Lin et al.
patent: 6001747 (1999-12-01), Annapragada
patent: 6022814 (2000-02-01), Mikoshiba et al.
patent: 6051321 (2000-04-01), Lee et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6127285 (2000-10-01), Nag
patent: 6127428 (2000-10-01), Lundgren et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6238751 (2001-05-01), Mountsier
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6348415 (2002-02-01), Lee et al.
patent: 6348725 (2002-02-01), Cheung et al.
patent: 6372670 (2002-04-01), Maeda
patent: 6437443 (2002-08-01), Grill et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6455445 (2002-09-01), Matsuki
patent: 6479110 (2002-11-01), Grill et al.
patent: 6530340 (2003-03-01), You et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6541398 (2003-04-01), Grill et al.
patent: 6541865 (2003-04-01), Hawker et al.
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6596627 (2003-07-01), Mandal
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 6737365 (2004-05-01), Kloster et al.
patent: 6756323 (2004-06-01), Grill et al.
patent: 6768200 (2004-07-01), Grill et al.
patent: 6770573 (2004-08-01), Grill et al.
patent: 6784123 (2004-08-01), Matsuki et al.
patent: 6790789 (2004-09-01), Grill et al.
patent: 6825130 (2004-11-01), Todd
patent: 6846515 (2005-01-01), Vrtis et al.
patent: 6890639 (2005-05-01), Mandal
patent: 6897163 (2005-05-01), Gaillard et al.
patent: 7012030 (2006-03-01), Mandal
patent: 7094710 (2006-08-01), Mandal
patent: 7205224 (2007-04-01), Mandal
patent: 7399697 (2008-07-01), Mandal
patent: 2002/0034625 (2002-03-01), Grill et al.
patent: 2002/0037442 (2002-03-01), Grill et al.
patent: 2002/0137359 (2002-09-01), Grill et al.
patent: 2002/0172766 (2002-11-01), Laxman et al.
patent: 2002/0180051 (2002-12-01), Grill et al.
patent: 2003/0057414 (2003-03-01), Dalton et al.
patent: 2003/0064154 (2003-04-01), Laxman et al.
patent: 2003/0104689 (2003-06-01), Shioya et al.
patent: 2003/0111712 (2003-06-01), Andideh et al.
patent: 2003/0116421 (2003-06-01), Xu et al.
patent: 2003/0143865 (2003-07-01), Grill et al.
patent: 2003/0198742 (2003-10-01), Vrtis et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0048960 (2004-03-01), Peterson et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0101632 (2004-05-01), Zhu et al.
patent: 2004/0102006 (2004-05-01), Xu et al.
patent: 2004/0115954 (2004-06-01), Todd
patent: 2004/0175501 (2004-09-01), Lukas et al.
patent: 2004/0175957 (2004-09-01), Lukas et al.
patent: 2004/0195693 (2004-10-01), Kloster et al.
patent: 2004/0197474 (2004-10-01), Vrtis et al.
patent: 2005/0025892 (2005-02-01), Satoh et al.
patent: 2006/0078676 (2006-04-01), Lukas et al.
patent: 0 522 799 (1993-01-01), None
patent: 0 528 540 (1993-02-01), None
patent: 0 703 611 (1996-03-01), None
patent: 0 935 283 (1999-08-01), None
patent: 1 354 980 (2003-10-01), None
patent: 2 326 765 (1998-12-01), None
patent: 11-354639 (1999-12-01), None
patent: WO 99/15711 (1999-04-01), None
patent: WO 99/41423 (1999-08-01), None
patent: WO 99/63591 (1999-12-01), None
patent: WO 02/43119 (2002-05-01), None
Kumar, “Dielectric Properties of Plasma Polymerized Furan Thin Film Capacitors” Material Letter, vol. 41 (1999) pp. 1-4.
Australian Search Report for SG 200006722-3, dated Nov. 1, 2002 (APPM/003771.SG).
Australian Examination Report for SG 200006722-3, dated Nov. 12, 2003 (APPM/003771.SG).
European Partial Search Report for EP 00 12 6111.4-1235, dated Sep. 24, 2004 (APPM/003771.EP).
European Search Report for EP 00 126111.4-1235, dated Apr. 5, 2005 (APPM/003771.EP).

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