Very high speed FRAM for replacing SRAM

Details Very high speed FRAM for replacing SRAM Very high speed FRAM for replacing SRAM

2010-02-03

2011-11-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189150

Reexamination Certificate

active

08064242

ABSTRACT:
For replacing SRAM with very high speed FRAM, new memory architecture is realized such that plurality of FRAM cells is connected to a local bit line pair, a local sense amp is connected to the local bit line pair, a global sense amp is connected to the local sense amp through a global bit line pair, and a locking signal generator is connected to the global sense amp for generating a locking signal which disables the local sense amp after reading for quick write-back operation. With short bit line architecture, bit lines are multi-divided for reducing parasitic capacitance of the local bit line, which realizes to reduce the ferroelectric capacitor proportionally. The FRAM cell includes an access transistor pair, a ferroelectric capacitor pair for storing positive data and negative data, and a reset transistor pair for resetting storage nodes. And various circuits for implementing the memory are described.

REFERENCES:
patent: 5121353 (1992-06-01), Natori
patent: 5416735 (1995-05-01), Onishi et al.
patent: 5570319 (1996-10-01), Santoro et al.
patent: 6034884 (2000-03-01), Jung
patent: 6147895 (2000-11-01), Kamp
patent: 6424558 (2002-07-01), Braun et al.
patent: 6574135 (2003-06-01), Komatsuzaki
patent: 7158428 (2007-01-01), Fujimoto
patent: 7382641 (2008-06-01), Kang
patent: 7443714 (2008-10-01), Kim
patent: 2006/0077740 (2006-04-01), Lee et al.
patent: 2007/0183191 (2007-08-01), Kim
patent: 2007/0211535 (2007-09-01), Kim
patent: 2008/0025113 (2008-01-01), Kitagawa
patent: 2008/0316839 (2008-12-01), Kajigaya

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