Verticle BJT, manufacturing method thereof

Details Verticle BJT, manufacturing method thereof Verticle BJT, manufacturing method thereof

2007-08-20

2010-06-01

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C438S342000, C257SE27039

Reexamination Certificate

active

07728408

ABSTRACT:
A vertical BJT which has a maximal current gain for a photodiode area. According to embodiments, since the BJT can be formed together with the photodiode, and collector current flows up and down based on the double base structure, the magnitude of the current may be increased.

REFERENCES:
patent: 5243207 (1993-09-01), Plumton et al.
patent: 2005/0167784 (2005-08-01), Losehand
patent: 2006/0199348 (2006-09-01), Bromberger
patent: 10-2006-0010665 (2006-02-01), None

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