Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-10-10
2006-10-10
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C257SE21540
Reexamination Certificate
active
07118988
ABSTRACT:
A static random access memory (SRAM) cell structure is created in a three-dimensional format as a vertical stack of wired transistors. These transistors are fabricated from crystalline silicon, and supplemental wiring structure features are fabricated to comprise a circuit along the walls of a vertical pillar. The three-dimensional cell integrated circuit can be created by a single mask step. Various structural features and methods of fabrication are described in detail. Peripheral interface, a two pillar version and other supplemental techniques are also described.
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patent: 5266526 (1993-11-01), Aoyama et al.
patent: 5328810 (1994-07-01), Lowrey et al.
Buerger, Jr. Walter Richard
Hohl Jakob Hans
Long Mary Lundgren
Ridgeway Kent
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