Vertically-oriented semiconductor selection device for...

Details Vertically-oriented semiconductor selection device for... Vertically-oriented semiconductor selection device for...

2009-05-20

2011-12-13

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S314000, C257S318000, C257S330000

Reexamination Certificate

active

08076717

ABSTRACT:
A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The second doped region is electrically coupled to a second silicide layer on the upper surface of the mesa. A gate conductor is provided on one or more sidewalls of the mesa.

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