Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-01-16
1996-11-26
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
757296, 757328, 757347, 757350, 757352, H01L 2910, H01L 2972
Patent
active
055788505
ABSTRACT:
A vertical transistor (10) has a substrate (12) and a control electrode conductive layer (18), which functions as a control or gate electrode. A sidewall dielectric layer (22) is formed laterally adjacent the control electrode conductive layer (18) and overlying the substrate (12). The conductive layer (18) at least partially surrounds a channel region (30). A vertical conductive region is formed within a device opening wherein a bottom portion of the conductive region is a first current electrode (28). A middle portion of the vertical conductive region is the channel region (30). A top portion of the vertical conductive region is a second current electrode (34).
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Fitch Jon T.
Mazure Carlos A.
Witek Keith E.
Crane Sara W.
Hardy David B.
Motorola Inc.
Witek Keith E.
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