Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1994-01-18
1995-03-14
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Semiconductive
257296, 257302, 257304, 257311, 437 52, H01L 2978, H01L 2701
Patent
active
053982002
ABSTRACT:
A semiconductor memory device is formed having a substrate (12). A diffusion (14) is formed within the substrate (12). A first vertical transistor stack (122) is formed. A second vertical transistor stack (124) is formed. The first vertical transistor stack (122) has a transistor (100) underlying a transistor (104). The second vertical transistor stack (124) has a transistor (102) underlying a transistor (106). The transistors (100 and 104) are connected in series, and the transistors (102 and 106) are connected in series. In a preferred form, transistors (100 and 102) are electrically connected as latch transistors for a semiconductor memory device and transistors (106 and 104) are connected as pass transistors. Two vertical stacks (126 and 128) form electrical interconnections (118 and 120) and resistive devices (134 and 138) for the semiconductor memory device.
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"Impact of Surrounding Gate Transistor (SGT) for Ultra-High-Density LSI's", by Hiroshi Takato et al., was published in IEEE Trans. on Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 573-577.
Fitch Jon T.
Hayden James D.
Mazure Carlos A.
Witek Keith E.
Motorola Inc.
Nguyen Viet Q.
Witek Keith E.
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