Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-08
2008-08-12
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S367000
Reexamination Certificate
active
07411248
ABSTRACT:
A vertical unipolar component formed in a semiconductor substrate, comprising vertical fingers made of a conductive material surrounded with silicon oxide, portions of the substrate being present between the fingers and the assembly being coated with a conductive layer. The component periphery includes a succession of fingers arranged in concentric trenches, separated from one another by silicon oxide only, the upper surface of the fingers of at least the innermost rank being in contact with said conductive layer.
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French Search Report from French Patent Application 04/52902, filed Dec. 8, 2004.
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Tran Thien F
Wolf Greenfield & Sacks P.C.
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