Vertical type vapor-phase growth apparatus

Details Vertical type vapor-phase growth apparatus Vertical type vapor-phase growth apparatus

1979-07-05

1981-09-22

Lawrence, Evan K.

Coating apparatus

Gas or vapor deposition

Work support

118900, C23C 1100

Patent

active

042903858

ABSTRACT:
A vertical type vapor-phase growth apparatus comprises a vapor-phase growth reactor constituted of an upper section defining an upper chamber having a lateral cross-section of about 200 cm.sup.2 and a lower section defining a lower chamber having a lateral cross-sectional area greater than, but smaller than four times the cross-sectional area of, the upper chamber, and a support for a semiconductor substrate disposed within the lower chamber.

REFERENCES:
patent: 3231337 (1966-01-01), Barkemeyer et al.
patent: 3297501 (1967-01-01), Reisman
patent: 3338761 (1967-08-01), Cheney et al.
patent: 3406048 (1968-10-01), Immendorfer et al.
patent: 3675619 (1972-07-01), Burd
patent: 3745969 (1973-07-01), Huffman et al.
IBM Technical Disclosure Bulletin, "Producing Epitaxial Germanium Deposits", Hornberger, (Oct. 1966), vol. 9, No. 5, pp. 538, 539.
Jo. of the Electrochemical Soc., "The Use of Metal Organics in the Preparation of Semiconductor Materials", Manasevit et al., vol. 116, No. 12, pp. 1725-1732, Dec. 1969.
Jo. of the Electrochemical Soc., "Properties of Epitaxial Gallium Arsenide from Trimethyl Gallium and Arsine", Ito et al., (Oct.-1973), pp. 419-423.

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