Vertical type semiconductor device provided with an improved con

Details Vertical type semiconductor device provided with an improved con Vertical type semiconductor device provided with an improved con

1994-08-22

1996-04-02

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257329, 257335, 257339, 257341, H01L 2976, H01L 2994, H01L 31062

Patent

active

055043607

ABSTRACT:
A vertical type semiconductor device is provided with an improved construction which greatly decreases the on-resistance without impairing the breakdown voltage thereof. In the fundamental DMOS cells that control a current to constitute the vertical semiconductor device, through-hole cells are arranged along the sides of a cell having a channel. The through-hole cell includes a through-hole extending from the surface of an n.sup.- -type drift region toward an n.sup.+ -type drain region, and also includes an n.sup.+ -type through-hole region that is formed by diffusing impurities from the inner wall of the through-hole which is continuous with the n.sup.+ -type drain region. A breakdown voltage of the element is maintained by the n.sup.- -type drift region between a p-type well region and the n.sup.+ -type through-hole region or the n.sup.+ -type drain region. Given the unique arrangement of the through-hole cells, the JFET resistance component becomes negligibly small between the DMOS cells neighboring along the sides of the cells despite the fact that the cells are finely formed, and a small on-resistance is exhibited.

REFERENCES:
patent: 4366495 (1982-12-01), Goodman et al.
patent: 4743952 (1988-05-01), Baliga
patent: 4893160 (1990-01-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
Yoshida et al, Japanese J of Applied Physics. Supp., vol. 15, No. 7, "A High Power MOS-FET with a Vertical Drain Electrode and Meshed Gate Structure" pp. 179-183.

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