Vertical type semiconductor device and method of...

Details Vertical type semiconductor device and method of... Vertical type semiconductor device and method of...

2007-05-29

2007-05-29

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S335000, C257S341000, C257S342000

Reexamination Certificate

active

10804018

ABSTRACT:
As and B are implanted to side surfaces of trenches3by a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n−-type epitaxial Si layer is interposed between trenches3is converted into a semiconductor structure consisting of n-type pillar layer5/p-type pillar layer4
-type pillar layer5lining up. The structure can function substantially the same role as that of a super junction structure.

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