Vertical type semiconductor device and gate structure

Details Vertical type semiconductor device and gate structure Vertical type semiconductor device and gate structure

1995-06-06

1998-08-25

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257346, H01L 2976, H01L 2994, H01L 31062

Patent

active

057985502

ABSTRACT:
The present invention involves a vertical type semiconductor device whereby miniaturization and lowered ON resistance of a cell within the device can be achieved without impairing the functioning of the device. The line width of the gate electrode is made smaller to meeting the demand for miniaturization of the cell while the distance between the channel regions which are diffused into the portions below the gate during double diffusion remains virtually equal to that in the device of larger cell size having a low J.sub.FET resistance component. While the width of the gate electrode is set to be smaller, the mask members used during double diffusion are attached to the side walls of the gate electrode, where their width allows the source region to diffuse to the portion under the gate. Accordingly, miniaturization and lowered ON resistance of the cell can be achieved without impairing the functioning of the device.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 4904613 (1990-02-01), Coe et al.
patent: 4998151 (1991-03-01), Korman et al.
patent: 5008720 (1991-04-01), Uenishi
patent: 5031009 (1991-07-01), Fujihira
patent: 5306937 (1994-04-01), Nishimura
patent: 5319222 (1994-06-01), Shekar
patent: 5338693 (1994-08-01), Kinzer et al.

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