Vertical type semiconductor device

Details Vertical type semiconductor device Vertical type semiconductor device

2007-01-30

2007-01-30

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S331000, C257S341000, C257S401000

Reexamination Certificate

active

10549151

ABSTRACT:
In a vertical type MOSFET device having a super junction structure, in which a N conductive type column region and a P conductive type column region are alternately aligned, regarding to a distance between a terminal end of an active region and a terminal end of a column region, the terminal end of the column region is disposed at a position, which is separated from the active region terminal end by a distance obtained by subtracting a half of a width of the N conductive type column region from a distance corresponding to a depth of the column region. Thus, an electric field concentration at a specific portion in a region facing a narrow side of the column structure is prevented so that a breakdown voltage of the vertical type MOSFET is improved.

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patent: A-2004-22716 (2004-01-01), None

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