Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S331000, C257S339000, C257S488000, C257S332000, C257S333000, C257S334000, C438S259000, C438S270000, C438S589000
Reexamination Certificate
active
06878992
ABSTRACT:
A power MOSFET comprises, between source and drain electrodes, a low resistive semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type formed on the semiconductor substrate, a high resistive epitaxial layer of the first conductivity type formed on the drift layer, trenches formed to extend from a surface of the epitaxial layer into the drift layer, gate electrodes buried in the trenches with gate insulating films interposed between the gate electrodes and walls of the trenches, low resistive source layers of the first conductivity type formed in a surface region of the epitaxial layer adjacent to the gate insulating films, and a base layer of a second conductivity type formed in the surface region of the epitaxial layer, wherein the epitaxial layer intervening between the trenches is depleted in a case where 0 volt is applied between the source electrode and the gate electrodes.
REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 5326711 (1994-07-01), Malhi
patent: 5637898 (1997-06-01), Baliga
patent: 5661322 (1997-08-01), Williams et al.
patent: 5679966 (1997-10-01), Baliga et al.
patent: 5760440 (1998-06-01), Kitamura et al.
patent: 5828101 (1998-10-01), Endo
patent: 5831288 (1998-11-01), Singh et al.
patent: 5844273 (1998-12-01), Konishi
patent: 5895952 (1999-04-01), Darwish et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6008520 (1999-12-01), Darwish et al.
patent: 6252258 (2001-06-01), Chang et al.
patent: 6252288 (2001-06-01), Chang
patent: 6285060 (2001-09-01), Korec et al.
patent: 6359308 (2002-03-01), Hijzen et al.
patent: 6380569 (2002-04-01), Chang et al.
patent: 6509608 (2003-01-01), Hueting
patent: 6525375 (2003-02-01), Yamaguchi et al.
patent: 0 238 749 (1987-09-01), None
Baliga, B.J., “Critical Nature of Oxide/Interface Quality for SIC Power Devices”, 9thBiennial Conference on Insulating Films on Semiconductors, Villard De Lans, France, 7-10 Jun. 1995, Microelectronic Engineering, Jun. 1995, Elsevier Publishers B.V., Amsterdam, Netherlands, vol. 28, No. 1-4, pp. 177-184.
Kawaguchi Yusuke
Nakagawa Akio
Nakamura Kazutoshi
Ono Syotaro
Yasuhara Norio
Erdem Fazli
Flynn Nathan J.
LandOfFree
Vertical-type power MOSFET with a gate formed in a trench does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical-type power MOSFET with a gate formed in a trench, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical-type power MOSFET with a gate formed in a trench will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3413626