Vertical trench misfet and method of manufacturing the same

Details Vertical trench misfet and method of manufacturing the same Vertical trench misfet and method of manufacturing the same

1996-02-15

1999-11-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257341, H01L 2976

Patent

active

059819960

ABSTRACT:
A vertical trench MISFET is provided that includes a semiconductor substrate having a first conductivity type semiconductor, and a second conductivity type impurity layer provided on the first conductivity type semiconductor. A trench extends from a surface of the semiconductor substrate to reach said first conductivity type semiconductor. A second conductivity type base region is formed in a top portion of the semiconductor substrate, and a first conductivity type source region is formed in a part of a surface layer of the second conductivity type base region. A first conductivity type drain drift region having a small thickness is formed in a surface layer of a side wall of the trench. The drain drift region has a higher impurity concentration than a level at which a breakdown voltage measured in a hypothetical diffusion type junction is substantially equal to an element withstand voltage. A gate electrode is formed on an exposed surface of the second conductivity type base region, through a gate insulating film. A source electrode is disposed in contact with surfaces of both of the first conductivity type source region and the second conductivity type base region, while a drain electrode is disposed in contact with a rear surface of the first conductivity type semiconductor.

REFERENCES:
patent: 4398339 (1983-08-01), Blanchard et al.
patent: 5168331 (1992-12-01), Yilmaz
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5701026 (1997-12-01), Fujishima et al.

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