Vertical trench gate transistor semiconductor device and...

Details Vertical trench gate transistor semiconductor device and... Vertical trench gate transistor semiconductor device and...

2005-12-09

2010-02-16

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

07663182

ABSTRACT:
A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

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patent: 4767722 (1988-08-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
patent: 6707100 (2004-03-01), Gajda
patent: 6710401 (2004-03-01), Nakamura et al.
patent: 7187041 (2007-03-01), Mizokuchi et al.
patent: 2662217 (1987-11-01), None
patent: 11-103052 (1999-04-01), None
patent: 2000-252468 (2000-09-01), None
patent: 2001-085685 (2001-03-01), None

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