Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-02
1997-05-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257347, 257348, 257351, 257352, H01L 2701, H01L 2712, H01L 310392
Patent
active
056273959
ABSTRACT:
A vertically raised transistor (10) is formed having a substrate (12). A conductive plug region (22) is selectively or epitaxially formed to vertically elevate the transistor (10). A first doped region (16a) and a second doped region (16b) are each electrically coupled to the conductive plug region (22) via sidewall contacts. The doped regions (16a and 16b) are used to form current electrode regions (26) within the conductive plug region (22). A channel region separates the current electrodes (26). A gate dielectric layer (28) is formed to overlie the channel region. A conductive layer (30) is formed to overlie the gate dielectric layer (28). Conductive layer (30) forms a gate electrode for the transistor (10). The vertical raised transistor (10) and conductive plug region (22) provide improved device isolation and improved device operation.
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Fitch Jon T.
Mazure Carlos A.
Witek Keith E.
Abraham Fetsum
Crane Sara W.
Motorola Inc.
Witek Keith E.
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