Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-16
1995-05-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257347, 257 74, 257401, 257369, 257377, H01L 2910, H01L 2978
Patent
active
054142881
ABSTRACT:
A method for forming a vertical transistor (10) begins by providing a substrate (12). A conductive layer (16) is formed overlying the substrate (12). A first current electrode (26), a second current electrode (30), and a channel region (28) are each formed via one of either selective growth, epitaxial growth, in-situ doping, and/or ion implantation. A gate electrode or control electrode (34) is formed laterally adjacent the channel region (28). A selective/epitaxial growth step is used to connect the conductive layer (16) to the control electrode (34) and forms a control electrode interconnect which is reliable and free from electrical short circuits to the current electrodes (26 and 30). The transistor (10) may be vertically stacked to form compact inverter circuits.
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Fitch Jon T.
Mazure Carlos A.
Witek Keith E.
Gray John
Motorola Inc.
Prenty Mark V.
Witek Keith E.
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