Vertical transistor comprising a mobile gate and a method...

Details Vertical transistor comprising a mobile gate and a method... Vertical transistor comprising a mobile gate and a method...

2005-02-01

2005-02-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S414000, C257S415000, C257S418000, C438S048000, C438S050000, C438S052000

Reexamination Certificate

active

06849912

ABSTRACT:
What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.

REFERENCES:
patent: 5903038 (1999-05-01), Zhang et al.

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