Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S331000, C257SE27060, C257SE27084, C257SE27085, C257SE27096, C257SE29262
Reexamination Certificate
active
07968937
ABSTRACT:
A vertical transistor includes a substrate, a semiconductor structure, a gate, a gate dielectric layer, and a conductive layer. The semiconductor structure is disposed on the substrate and includes two vertical plates and a bottom plate. The bottom plate has an upper surface connected to bottoms of the two vertical plates and a bottom surface connected to the substrate. The gate surrounds the semiconductor structure to fill between the two vertical plates, and the gate is disposed around the two vertical plates. The gate dielectric layer is sandwiched in between the gate and the semiconductor structure, and the conductive layer is disposed on the semiconductor structure and electrically connected with tops of the two vertical plates.
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Chen Jung-Hua
Wang Kuo-Chen
Jianq Chyun IP Office
Joy Jeremy J
Nanya Technology Corporation
Smith Zandra
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