Vertical switched-emitter structure with improved lateral isolat

Details Vertical switched-emitter structure with improved lateral isolat Vertical switched-emitter structure with improved lateral isolat

1995-09-15

1996-11-12

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055743013

ABSTRACT:
A vertical switched-emitter device structure in which the body of a vertical-current-flow MOS device is formed in a P-type surface epi region, and dielectric isolation laterally separates the body from the surface contact to the buried P-type base region.

REFERENCES:
patent: 4487639 (1984-12-01), Lam et al.
patent: 4868626 (1989-09-01), Nakazato et al.
patent: 4881119 (1989-11-01), Paxman et al.
patent: 4935799 (1990-06-01), Mori et al.
patent: 5118635 (1992-06-01), Frisina
patent: 5247200 (1993-09-01), Momose et al.
patent: 5380670 (1995-01-01), Hagino
patent: 5424231 (1995-06-01), Yang
Richard A. Blanchard, "A Power Transistor with an Integrated Thermal Feedback Mechanisim" Massachusetts Institute of Technology Masters Dissertation, Jul. 1970.

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