Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-01-11
2011-01-11
Thai, Luan C (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S790000, C257S706000, C257S777000, C257S723000, C257S796000, C257SE23126, C257SE23116, C257SE23134
Reexamination Certificate
active
07868443
ABSTRACT:
A vertical stack type multi-chip package is provided having improved reliability by increasing the grounding performance and preventing the decrease in reliability of the multi-chip package from moisture penetration into a lower semiconductor chip. The vertical stack type multi-chip package comprises an organic substrate having a printed circuit pattern on which a semiconductor chip is mounted. A first semiconductor chip is mounted on a die bonding region of the organic substrate and is electrically connected to the organic substrate through a first wire. A metal stiffener is formed on the first semiconductor chip and connected to the organic substrate by a first ground unit around the first semiconductor chip. An encapsulant is used to seal the first semiconductor chip below the metal stiffener. A second semiconductor chip, which is larger in size than that the first semiconductor chip, is mounted on the metal stiffener and connected by a second ground unit. The second semiconductor chip is connected to the organic substrate by a second wire. A mold resin seals the second semiconductor chip and a solder ball is bonded to a solder ball pad below the organic substrate.
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Kim Tae-hun
Kwon Heung-kyu
Lee Su-chang
Samsung Electronics Co,. Ltd.
Thai Luan C
Volentine & Whitt PLLC
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