Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-08
1998-12-01
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257263, H01L 2976
Patent
active
058442731
ABSTRACT:
A vertical semiconductor device incorporates a semiconductor laminar structure including a semiconductor substrate of a first conductive type having a relatively high impurity concentration, a first semiconductor layer of the first conductive type laminated on the semiconductor substrate and having a relatively low impurity concentration, and a second semiconductor layer of the first conductive type laminated on the first semiconductor layer and having an even lower impurity concentration. A trench is formed in the semiconductor laminar structure to extend through the second semiconductor layer into the first semiconductor layer. A source region of the first conductive type is formed in a surface layer of the second semiconductor layer and the trench is filled with a gate electrode. A source electrode is formed on the source region and a drain electrode is formed on a rear surface of the semiconductor substrate.
REFERENCES:
patent: 5430315 (1995-07-01), Rumennik
patent: 5558313 (1996-09-01), Hshieh et al.
"Comparison of Ultralow Specific On-Resistance UMOSFET Structures: the ACCUFET, EXTFET, INVFET, and Conventional UMOSFET's" by Isengyou Syau et al., IEEE Transactions on Electron Devices, vol. 41, No. 5, May 1994.
Fuji Electric Co.
Jackson Jerome
Kelley Nathan K.
LandOfFree
Vertical semiconductor device and method of manufacturing the sa does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical semiconductor device and method of manufacturing the sa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical semiconductor device and method of manufacturing the sa will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2397647