Vertical semiconductor device

Details Vertical semiconductor device Vertical semiconductor device

2011-01-11

2011-01-11

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S341000, C257S330000, C257S492000, C257S262000

Reexamination Certificate

active

07868397

ABSTRACT:
In a vertical semiconductor device including a first base layer of a first conductivity type, second base layers of a second conductivity type, emitter layer of the first conductive type and gate electrodes which are formed at one main surface of the first base layer and including a buffer layer of the first conductivity type, a collector layer of the second conductivity type and a collector electrode which are formed at the other main surface of the first base layer, an electric field relaxing structure selectively formed outside from the second base layers and the collector layer is formed expect the region below the electric field relaxing structure.

REFERENCES:
patent: 6407413 (2002-06-01), Kawamoto
patent: 7518197 (2009-04-01), Yamaguchi
patent: 8-288524 (1996-11-01), None
patent: 2001-217420 (2001-08-01), None
Tsuneo Ogura, et al., “A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs” Proceedings of the 18thInternational Symposium on Power Seminconductor Devices & IC's, Jun. 4, 2008, pp. 25-28.

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