Vertical semiconductor device

Details Vertical semiconductor device Vertical semiconductor device

1996-03-29

1999-02-16

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257335, H01L 2976

Patent

active

058723749

ABSTRACT:
An n-channel device (10) and a p-channel device (11) are formed from a single epitaxial silicon layer (60,61). During the deposition of the single epitaxial silicon layer (60,61), dopants are added to the epitaxial reaction chamber and subsequently changed to define a drain region (24,33), a channel region (27,34), and a source region (30,35). The dopant concentration is modified during the formation of the channel region (27,34) to create a doping profile (50). The doping profile (50) has a first profile (51) that is constant and a second profile (52) that changes.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
patent: 5164325 (1992-11-01), Cogan et al.
patent: 5443992 (1995-08-01), Risch et al.
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5479037 (1995-12-01), Hshieh et al.
patent: 5483094 (1996-01-01), Sharma et al.

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