Vertical semiconductor component having a drift zone having...

Details Vertical semiconductor component having a drift zone having... Vertical semiconductor component having a drift zone having...

2007-02-06

2007-02-06

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257S341000, C257S342000, C257S346000

Reexamination Certificate

active

10927948

ABSTRACT:
The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features:a semiconductor body (100) having a first side (101) and a second side (102),a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage,a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A–40E;90A–90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A–40E;90A–90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 5973360 (1999-10-01), Tihanyi
patent: 6365462 (2002-04-01), Baliga
patent: 2003/0073287 (2003-04-01), Kocon
patent: 2004/0063269 (2004-04-01), Kocon
patent: 2005/0173758 (2005-08-01), Peake et al.
patent: 197 55 868 (1999-04-01), None
Baliga, B., “Power Semiconductor Devices”, PWS Publishing, Boston, 1995, (3 pages).

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