Vertical power MOSFET having thick metal layer to reduce distrib

Details Vertical power MOSFET having thick metal layer to reduce distrib Vertical power MOSFET having thick metal layer to reduce distrib

1997-01-06

2000-05-23

Thoms, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257337, 257401, H01L 2976

Patent

active

060668776

ABSTRACT:
The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly on the thin metal layer through an opening that is formed in the passivation layer.

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