Vertical power mosfet having thick metal layer to reduce distrib

Details Vertical power mosfet having thick metal layer to reduce distrib Vertical power mosfet having thick metal layer to reduce distrib

1994-12-30

1997-09-09

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257341, 257784, 257766, H01L 2976, H01L 2994, H01L 2348

Patent

active

056659962

ABSTRACT:
The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly on the thin metal layer through an opening that is formed in the passivation layer.

REFERENCES:
patent: 4268849 (1981-05-01), Gray et al.
patent: 4864370 (1989-09-01), Gaw et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5023692 (1991-06-01), Wodarczyk et al.
patent: 5315156 (1994-05-01), Lott
patent: 5321302 (1994-06-01), Shimawaki
patent: 5359220 (1994-10-01), Larson et al.
patent: 5473193 (1995-12-01), Temple et al.

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