Vertical power field effect transistor having base region inward

Details Vertical power field effect transistor having base region inward Vertical power field effect transistor having base region inward

1993-03-08

1994-04-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257653, H01L 2910, H01L 2906

Patent

active

053048326

ABSTRACT:
A vertical power field effect transistor is liable to be destroyed due to a large amount of current backwardly flowing from the drain region through the base region into the source region when a parasitic bipolar transistor fabricated therefrom turns on, and base contacts radially and inwardly project from the four corners a rectangular base region into a rectangular source region so that the resistance of the base region is decreased, thereby effectively preventing the parasitic bipolar transistor from turn-on.

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