Vertical power device with integrated control circuitry

Details Vertical power device with integrated control circuitry Vertical power device with integrated control circuitry

1999-04-05

2000-10-03

Trinh, Michael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257350, 257 67, H01L 2976

Patent

active

061277010

ABSTRACT:
A process for integrating a vertical power device, such as an IGBT device, with suitable control circuitry, such as circuitry that provides self-protection from over-temperature (OT), over-voltage (OV) and over-current (OC) conditions. The process yields a vertical power device that is monolithically integrated with, and dielectrically isolated from, its control circuitry with the use of wafer-bonded silicon-on-insulator (SOI) material that yields a buried oxide layer. The process includes simultaneous fabrication of the power device below the buried oxide layer and its control circuitry above the buried oxide layer, in the SOI layer.

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patent: 5079607 (1992-01-01), Dakurai
patent: 5476809 (1995-12-01), Kobayashi
patent: 5547886 (1996-08-01), Harada
patent: 5627399 (1997-05-01), Fujii

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