Vertical poly load device in 4T SRAM technology

Details Vertical poly load device in 4T SRAM technology Vertical poly load device in 4T SRAM technology

1999-07-26

2000-10-10

Smith, Mathew S.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257907, 257904, 257902, 257903, 438238, 438382, H01L 2976

Patent

active

06130462&

ABSTRACT:
A novel vertical poly load device in 4T SRAM and a method for fabricating the same are disclosed. The poly load structure is a vertical device formed on a buried contact. The poly load vertical device is constructed by forming a hollow in a planarized dielectric layer with a high temperature oxide layer on the walls of the hollow and with lightly doped n-type polysilicon in the hollow. The poly load is connected to the respective drain of the driver transistor through the buried contact and to the gate of the respective gate of the other driver transistor through a connecting line. The resistance of the poly load will increase, as the voltage of the buried contact becomes low thereby reducing the standby current.

REFERENCES:
patent: 5330930 (1994-07-01), Chi
patent: 5885862 (1999-03-01), Jao et al.
patent: 5907175 (1999-05-01), Klein
patent: 5907176 (1999-05-01), Roberts
patent: 5986310 (1999-11-01), Peng
patent: 5986922 (1999-11-01), Perumal
patent: 5998276 (1999-12-01), Batra et al.
patent: 6008082 (1999-12-01), Rolfson

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