Vertical PNP bipolar transistor

Details Vertical PNP bipolar transistor Vertical PNP bipolar transistor

2005-07-05

2005-07-05

Nguyen, Van Thu (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S526000, C257S565000, C438S202000, C438S207000, C438S322000

Reexamination Certificate

active

06914308

ABSTRACT:
A semiconductor device in which a vertical pnp-bipolar transistor is formed in a prescribed element region on a semiconductor substrate includes: a buried n+-layer of a high concentration formed in the prescribed element region; and a p-type collector layer formed on the buried n+-layer. By introducing impurities that has a larger diffusion coefficient than the buried n+-layer, the collector layer can be formed on the buried n+-layer formed in common with other element regions, without any special masking.

REFERENCES:
patent: 5364802 (1994-11-01), Kataoka et al.
patent: 2001/0012655 (2001-08-01), Nordstom et al.
patent: 6-349850 (1994-12-01), None

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