Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1991-07-30
1992-11-17
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Capacitors
365182, 36518901, G11C 1124
Patent
active
051649179
ABSTRACT:
One embodiment of the present invention is a one transistor DRAM cell having enhanced capacitance and minimized soft error rate by providing an ungrounded cell capacitor plate which is insulated from the substrate. The structure includes a vertical transistor on the sides of a vertical depression or trench in a substrate. In the bottom of the trench, a memory cell capacitor is fabricated. This capacitor includes a conductive polycrystalline silicon post through the middle of the capacitor, thereby increasing the surface area of the capacitor plates. This increases the capacitance of the memory cell capacitor.
The ungrounded plate of the memory cell capacitor is fabricated in the trench and is insulated from the substrate. This ungrounded plate is connected to the vertical transistor via a polycrystalline silicone plug. Thus this embodiment of the present invention reduces soft error rate by providing a fully insulated ungrounded memory cell capacitor plate.
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Barndt B. Peter
Donaldson Richard L.
Fears Terrell W.
Matsil Ira S.
Texas Instruments Incorporated
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