Vertical NROM and methods for making thereof

Details Vertical NROM and methods for making thereof Vertical NROM and methods for making thereof

2005-09-06

2005-09-06

Wilson, Christian (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C438S270000

Reexamination Certificate

active

06940125

ABSTRACT:
Vertical NROM devices are made in a substantially single crystalline silicon substrate having a planar surface. The vertical NROM cell and device has a first region and a second region spaced apart from one another by a channel. A dielectric is spaced apart from the channel to capture charges injected from the channel onto the dielectric. A gate is positioned over the dielectric and spaced apart therefrom and controls the flow of current through the channel. In the improvement of the present invention, a portion of the channel is substantially perpendicular to the top planar surface of the substrate. Methods for making the vertical NROM cell and array are also disclosed.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6011725 (2000-01-01), Eitan
patent: 6486028 (2002-11-01), Chang et al.
patent: 6773994 (2004-08-01), Chittipeddi et al.
patent: 2003/0235076 (2003-12-01), Forbes

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