Vertical NAND flash memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185180, C257S319000, C257S315000, C257S316000, C257S278000

Reexamination Certificate

active

07369436

ABSTRACT:
Memory devices, arrays, and strings are included that facilitate the use of vertical floating gate memory cells in NAND architecture memory strings, arrays, and devices. NAND Flash memory strings, arrays, and devices, include vertical Flash memory cells to form NAND architecture memory cell strings and memory arrays. These vertical memory cell NAND architecture strings allow for an improved high density memory devices or arrays that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and still allow for appropriate device sizing for operational considerations.

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