Vertical MOSFET with through-body via for gate

Details Vertical MOSFET with through-body via for gate Vertical MOSFET with through-body via for gate

2011-03-22

2011-03-22

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S621000, C257SE29257, C257SE29262

Reexamination Certificate

active

07910992

ABSTRACT:
In an embodiment, set forth by way of example and not limitation, a MOSFET power chip includes a first vertical MOSFET and a second vertical MOSFET. The first vertical MOSFET includes a semiconductor body having a first surface defining a source and a second surface defining a drain and a gate structure formed in the semiconductor body near the second surface. A via is formed within the semiconductor body and is substantially perpendicular to the first surface and the second surface. The via has a first end electrically coupled to the first surface and a second end electrically coupled to the gate structure. The second vertical MOSFET includes a semiconductor body having a first surface defining a source, a second surface defining a drain and a gate structure formed in the semiconductor body near the first surface. The first surface of the first vertical MOSFET and the second surface of the second vertical MOSFET are substantially co-planar and an electrically conductive can substantially surrounds the MOSFETS and shorts the first surface of the first vertical MOSFET to the second surface of the second vertical MOSFET.

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