Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-26
2010-12-07
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S398000, C257SE29262, C257SE21420
Reexamination Certificate
active
07847329
ABSTRACT:
A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region.
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Pellizzer Fabio
Pirovano Agostino
Blakely , Sokoloff, Taylor & Zafman LLP
Parker Allen L
Sefer A.
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