Vertical MOSFET having trench covered with multilayer gate film

Details Vertical MOSFET having trench covered with multilayer gate film Vertical MOSFET having trench covered with multilayer gate film

1993-10-21

1994-06-14

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257334, H01L 2978, H01L 2910

Patent

active

053212894

ABSTRACT:
A vertical MOSFET includes a trench whose inner surface is covered with an insulating layer having a multilayer structure. In order to reduce a change in a gate threshold voltage, and equivalent silicon dioxide thickness of the gate insulating layer and a radius of curvature of an upper corner of the trench are provided such that a dielectric breakdown electric field strength of the gate insulating layer at the upper corner is in the range of 2.5 MV/cm to 5.0 MV/cm.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard
patent: 4914058 (1990-04-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard

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