Vertical MOSFET device having frontside and backside contacts

Details Vertical MOSFET device having frontside and backside contacts Vertical MOSFET device having frontside and backside contacts

1995-12-18

1996-11-26

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257236, 257242, 257263, 257778, H01L 27148, H01L 29768, H01L 2980, H01L 2348

Patent

active

055788416

ABSTRACT:
A multiple output, vertical MOSFET device (11) with improved electrical performance and thermal dissipation is integrated with an additional semiconductor device or semiconductor circuit (18) on a single semiconductor substrate (34). The method of making the vertical MOSFET device (11) involves thinning the semiconductor substrate (34) after fabricating the vertical MOSFET device (11) and the semiconductor circuit (18) to reduce the vertical component of electrical and thermal resistance and to increase the thermal dissipation efficiency. Electrical performance is improved by thinning the semiconductor substrate (34) and by providing a low resistivity, patterned metal buried layer. Thermal management is enhanced by using flip chip bumps (24) to dissipate heat from a top surface (31) of the semiconductor substrate (34) and by using the patterned buried metal layer (26) to dissipate heat from a bottom surface (32) of the semiconductor substrate (34).

REFERENCES:
patent: 5045902 (1991-09-01), Bancal
patent: 5119162 (1992-06-01), Todd et al.
patent: 5273615 (1993-12-01), Asetta et al.
patent: 5283454 (1994-02-01), Cambou
patent: 5407866 (1995-04-01), Sellers
patent: 5413952 (1995-05-01), Pages et al.

Affiliated with

Also associated with

Rating

Vertical MOSFET device having frontside and backside contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical MOSFET device having frontside and backside contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical MOSFET device having frontside and backside contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1974940