Vertical MOS transistor

Details Vertical MOS transistor Vertical MOS transistor

2007-08-21

2007-08-21

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S341000, C257S329000, C257SE21632, C257SE29027

Reexamination Certificate

active

10728132

ABSTRACT:
A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. The vertical MOS transistor also has an insulation layer that lines the trench, and a conductive gate region that contacts the insulation layer to fill up the trench.

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