Vertical MOS semiconductor device

Details Vertical MOS semiconductor device Vertical MOS semiconductor device

1995-06-20

1996-09-24

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257135, 257337, 257378, H01L 2976

Patent

active

055593550

ABSTRACT:
Mutual interference is reduced between a main cell portion and a sensing cell portion for detecting the current flowing through the main cell portion of a vertical MOS semiconductor device, and accuracy and reliability of overcurrent detection are improved. In the device, well regions of (p) type are formed between the main and sensing cell portions for capturing the minority carriers. Breakdown of the gate oxide film caused by an open emitter electrode of the sensing cell portion is prevented by forming the (p) type well regions with ring shapes, by spacing the (p) type well regions by 5 to 20 .mu.m, and by adjusting the isolation withstand voltage between the main and sensing cell portions below the withstand voltage of the gate oxide film. A voltage spike is minimized by narrowing the overlap of the detecting and gate electrodes for reduced capacitance between these electrodes.

REFERENCES:
patent: 5341003 (1994-08-01), Obinata

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