Vertical metal-insulator-metal (MIM) capacitors

Details Vertical metal-insulator-metal (MIM) capacitors Vertical metal-insulator-metal (MIM) capacitors

2006-08-16

2009-12-29

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S310000, C257S532000

Reexamination Certificate

active

07638830

ABSTRACT:
An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom electrodes are formed over the opposing side walls of the capacitance trench. A capacitance dielectric layer is disposed over the respective bottom electrodes, the bottom of the capacitance trench and the remaining top layer. Respective opposing initial via openings are formed adjacent the capacitance trench. Respective trench openings are formed above, continuous and contiguous with the lower portions of the respective opposing initial via openings and exposing portions of the underlying metal structure to form respective opposing dual damascene openings. Planarized metal portions disposed within the dual damascene openings and the capacitance trench form a top electrode.

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