Vertical memory device and method

Details Vertical memory device and method Vertical memory device and method

2007-11-14

2010-02-16

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S288000, C257SE21660, C257SE21680, C257SE21661, C257SE21662

Reexamination Certificate

active

07663172

ABSTRACT:
Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second gate comprising a vertical member and a horizontal member. The first gate is disposed laterally from the body and the second gate is disposed laterally from the first gate.

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