Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2007-10-16
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257SE29262
Reexamination Certificate
active
10522278
ABSTRACT:
A vertical JFET1aaccording to the present invention has an n+type drain semiconductor portion2, an n-type drift semiconductor portion3, a p+type gate semiconductor portion4, an n-type channel semiconductor portion5, an n+type source semiconductor portion7, and a p+type gate semiconductor portion8. The n-type drift semiconductor portion3is placed on a principal surface of the n+type drain semiconductor portion2and has first to fourth regions3ato3dextending in a direction intersecting with the principal surface. The p+type gate semiconductor portion4is placed on the first to third regions3ato3cof the n-type drift semiconductor portion3. The n-type channel semiconductor portion5is placed along the p+type gate semiconductor portion4and is electrically connected to the fourth region3dof the n-type drift semiconductor portion3.
REFERENCES:
patent: 4754310 (1988-06-01), Coe
patent: 6072215 (2000-06-01), Kawaji et al.
patent: 6137136 (2000-10-01), Yahata et al.
patent: 6281521 (2001-08-01), Singh
patent: 6373318 (2002-04-01), Dohnke et al.
patent: 6525375 (2003-02-01), Yamaguchi et al.
patent: 6784486 (2004-08-01), Baliga
patent: 6787848 (2004-09-01), Ono et al.
patent: 7023033 (2006-04-01), Harada et al.
patent: 2001/0024138 (2001-09-01), Dohnke et al.
patent: 0 053 854 (1982-06-01), None
patent: 1 119 054 (2001-07-01), None
patent: 51-135381 (1976-11-01), None
patent: 57-124469 (1982-08-01), None
patent: 04-276664 (1992-10-01), None
patent: 2000-114544 (2000-04-01), None
patent: 2000-150912 (2000-05-01), None
patent: 2000-252475 (2000-09-01), None
patent: 2000-269518 (2000-09-01), None
patent: 2001-144292 (2001-05-01), None
patent: 2001-196602 (2001-07-01), None
patent: 2002-520857 (2002-07-01), None
patent: WO00/019536 (2000-04-01), None
Fujikawa Kazuhiro
Harada Shin
Hatsukawa Satoshi
Hirotsu Ken-ichi
Hoshino Takashi
Fish & Richardson P.C.
Hafiz Mursalin B.
Le Thao X.
Sumitomo Electric Industries Ltd.
LandOfFree
Vertical junction field effect transistors, and methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vertical junction field effect transistors, and methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical junction field effect transistors, and methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3843093