Vertical junction field effect transistor having an...

Details Vertical junction field effect transistor having an... Vertical junction field effect transistor having an...

2008-04-08

2008-04-08

Geyer, Scott B. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S135000, C438S137000, C438S138000

Reexamination Certificate

active

11071437

ABSTRACT:
A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial gate structure may include separate first and second epitaxial gate layers, and may have either a graded or uniform dopant concentration profile.

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J.H. Zhao, K. Tone, X. Li, P. Alexandrov, L. Fursin, and M. Weiner; 6A, 1kV 4H-SiC Normally-off Trenched-and-Implanted Vertical JFETs.
Phelps, G.J., Dopant Ion Implantation Simulations in 4H-Silicon Carbide, Institute of Physics Publishing; Modeling Simul. Mater.Sci.Eng 12 (2004) 1139-1146.

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