Vertical insulated gate transistor and manufacturing method

Details Vertical insulated gate transistor and manufacturing method Vertical insulated gate transistor and manufacturing method

2007-08-28

2007-08-28

Elms, Richard T. (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S270000, C438S589000

Reexamination Certificate

active

10538216

ABSTRACT:
A vertical insulated gate transistor is manufactured by providing a trench (26) extending through a source layer (8) and a channel layer (6) towards a drain layer (2). A spacer etch is used to form gate portions (20) along the trench side walls, a dielectric material (30) is filled into the trench between the sidewalls gate portions (20), and a gate electrical connection layer (30) is formed at the top of the trench electrically connecting the gate portions (20) across the trench.

REFERENCES:
patent: 5258634 (1993-11-01), Yang
patent: 6444528 (2002-09-01), Murphy
patent: 6593613 (2003-07-01), Alsmeier et al.
patent: 6744097 (2004-06-01), Yoo
patent: 55133574 (1981-01-01), None
patent: 09181311 (1997-11-01), None

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