Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-07-29
1994-02-08
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257337, 257378, H01L 2976, H01L 2994, H01L 31062
Patent
active
052850943
ABSTRACT:
The present invention relates to a semiconductor device having an n-type semiconductor region forming one of the main surfaces of a semiconductor substrate, with a plurality of p-type semiconductor regions formed in the n-type semiconductor region. Two exposed n-type semiconductor regions are formed on each of the p-type semiconductor regions, with a main electrode formed on the n-type semiconductor regions and the exposed p-type semiconductor region therebetween. An insulated gate extends from one of the n-type semiconductor regions in one of the p-type semiconductor regions to a closer one of the n-type semiconductor regions in an adjacent p-type semiconductor region. The length of the insulated gate is longer than a distance between adjacent insulated gates.
REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 4774198 (1988-09-01), Contiero et al.
patent: 4777521 (1988-10-01), Coe
patent: 4809045 (1989-02-01), Yilmaz
patent: 4860072 (1989-08-01), Zommer
patent: 4920388 (1990-04-01), Blanchard et al.
patent: 4965647 (1990-10-01), Takahashi
Mori Mutsuhiro
Nakano Yasunori
Tanaka Tomoyuki
Yasuda Yasumichi
Hille Rolf
Hitachi , Ltd.
Loke Steven
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