Vertical insulated gate FET

Details Vertical insulated gate FET Vertical insulated gate FET

1992-11-23

1999-03-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257622, 257628, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058834117

ABSTRACT:
An insulated gate FET such as a power MOS FET is made by forming a rectangular parallelepiped-shaped recess in a direction that the side walls of the recess make 45.degree. angle against the <100> direction of the silicon substrate having (100) plane as principal surface, and the vertical side walls of (010) or (001) planes are used as channel region of the insulated gate FET, thereby assuring a large electron mobility in the channel, hence low channel resistance suitable for high power operation.

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