Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-30
2009-10-27
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S104000, C257S109000, C257S117000, C257S302000, C257SE27039
Reexamination Certificate
active
07608867
ABSTRACT:
A vertical IMOS-type transistor including: a stack of a first semiconductor portion doped with dopant elements of a first type, of a second substantially undoped intrinsic semiconductor portion, and of a third semiconductor portion doped with dopant elements of a second type forming a PIN-type diode; and a conductive gate placed against the stack with an interposed insulating layer.
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Charbuillet Clément
Skotnicki Thomas
Villaret Alexandre
Gurley Lynne A.
Jorgenson Lisa K.
Morris James H.
STMicroelectronics (Crolles 2) SAS
Webb Vernon P
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